dta143tm / dta143te / dta143tua transistors dta143tka / dta143tsa digital transistors (built-in resistor) dta143tm / dta143te / dta143tua dta143tka / dta143tsa ! ! ! ! features 1) built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) the bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. they also have the advantage of almost completely eliminating parasitic effects. 3) only the on/off conditions need to be set for operation, making device design easy. ! ! ! ! structure pnp digital transistor (built in resistor type) ! ! ! ! equivalent circuit r 1 b : base c : collector e : emitter b e c ! ! ! ! external dimensions (units : mm) abbreviated symbol : 93 0.2 0.2 0.5 0.5 1.0 0.1 1.6 0.2 0.3 0.8 0.1 1.6 0.2 0.55 0.1 0.7 0.1 0.15 0.05 0.1min. (3) (2) (1) 0~0.1 ? 0.05 + 0.1 + 0.1 ? 0.05 + 0.1 ? 0.05 (1) emitter (2) base (3) collector rohm : emt3 dta143te abbreviated symbol : 93 rohm : vmt3 dta143tm (1) base (2) emitter (3) collector 0~0.1 (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 1.2 0.8 0.2 0.15max. 0.2 ( 2 ) ( 1 ) 3 0.2 (15min.) 4 0.2 2 0.2 0.45 0.5 0.45 5 (1) (2) (3) ? 0.05 + 0.15 + 0.15 ? 0.05 2.5 + 0.4 ? 0.1 3min. (1) emitter (2) collector (3) base rohm : spt eiaj : sc-72 dta143tsa abbreviated symbol : 93 0~0.1 2.8 0.2 1.6 0.3min. 1.1 0.8 0.1 0.15 0.4 2.9 0.2 1.9 0.2 0.95 0.95 + 0.2 ? 0.1 ? 0.1 + 0.2 + 0.1 ? 0.06 + 0.1 ? 0.05 (2) (1) (3) (1) emitter (2) base (3) collector rohm : smt3 eiaj : sc-59 dta143tka all terminals have same dimensions abbreviated symbol : 93 0~0.1 (2) (1) (3) 0.1min. 2.1 0.1 1.25 0.1 0.9 0.1 0.2 0.7 0.1 0.15 0.05 0.3 2.0 0.2 1.3 0.1 0.65 0.65 + 0.1 ? 0 (1) emitter (2) base (3) collector rohm : umt3 eiaj : sc-70 dta143tua all terminals have same dimensions
dta143tm / dta143te / dta143tua transistors dta143tka / dta143tsa ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol v cbo ? 50 ? 50 ? 5 ? 100 150 200 300 150 ? 55~ + 150 e m uakasa v v ceo v ebo v v ma mw c c i c p c tj tstg unit collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature limits(dta143t ) ! ! ! ! electrical characteristics (ta=25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) r 1 f t min. ? 50 ? 50 ? 5 ? ? 100 ? 3.29 ? ? ? ? ? ? 250 ? 4.7 250 ? ? ? ? 0.5 ? 0.5 600 ? 0.3 6.11 ? ? vi c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 50v v eb = ? 4v i c = ? 1ma, v ce = ? 5v i c /i b = ? 5ma/ ? 0.25ma v ce = ? 10v, i e = 5ma, f = 100mhz ? v v a a ? v k ? mhz typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage input resistance transition frequency ? transition frequency of the device ! ! ! ! packaging specifications tl ? ? ? ? ? ? ??? ? ? ? ? ? ? ? ? ? ? ? umt3 emt3 smt3 spt dta143te dta143tm type dta143tua 3000 t2l vmt3 8000 t106 3000 t146 3000 tp 5000 dta143tka dta143tsa package packaging type taping taping taping taping taping code basic ordering unit (pieces)
dta143tm / dta143te / dta143tua transistors dta143tka / dta143tsa ! ! ! ! electrical characteristic curves v ce =? 5v ? 100 ? 1m ? 10m ? 200 ? 2m ? 20m ? 500 ? 5m ? 50m ? 100m 1k 500 200 100 50 20 10 5 2 1 dc current gain : h fe collector current : i c (a) ? 40 c 25 c ta = 100 c fig.1 dc current gain vs. collector current l c /l b = 20 ? 500m ? 200m ? 100m ? 50m ? 20m ? 10m ? 5m ? 2m ? 1m ? 1 ? 100 ? 1m ? 10m ? 200 ? 2m ? 20m ? 500 ? 5m ? 50m ? 100m collector saturation voltage : v ce(sat) (v) collector current : i c (a) ta = 100 c 25 c ? 40 c fig.2 collector-emitter saturation voltage vs. collector current
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